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Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

Cottom, J; Gruber, G; Pobegen, G; Aichinger, T; Shluger, AL; (2016) Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study. Materials Science Forum , 858 pp. 257-260. 10.4028/www.scientific.net/MSF.858.257.

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Abstract

Dopant implantation is a high energy process which causes a significant damage to the crystal lattice and is usually accompanied by a post implantation anneal to repair the structure. Defects created in these processes may also persist in fully processed devices. Previous electron paramagnetic resonance (EPR) and EDMR studies have identified a series of nitrogen related defect complexes in N implanted silicon carbide (SiC) wafers.[1–3] This study examines the formation energy, charge transition levels and barriers to interconversion of two such defects: NCVSi and the NSiVC. The NCVSi center is favoured in a variety of charge states for a wide range of Fermi level positions. We found, however, that for Fermi level positions close to the valence band of 4H-SiC the NCVSi center is a favoured conformation with barriers to rearrangement of +1.2 eV and +3.8 eV in the neutral and +2 charge states, respectively.

Type: Article
Title: Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study
DOI: 10.4028/www.scientific.net/MSF.858.257
Publisher version: https://doi.org/10.4028/www.scientific.net/MSF.858...
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Defect Simulations, Density Functional Theory, Implantation Defects, Nitrogen Defects, Nudge Elastic Band
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
URI: https://discovery.ucl.ac.uk/id/eprint/10074506
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