Cottom, J;
Gruber, G;
Pobegen, G;
Aichinger, T;
Shluger, AL;
(2016)
Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study.
Materials Science Forum
, 858
pp. 257-260.
10.4028/www.scientific.net/MSF.858.257.
Text
ICSCRM 2015PP.pdf - Accepted Version Access restricted to UCL open access staff Download (559kB) |
Abstract
Dopant implantation is a high energy process which causes a significant damage to the crystal lattice and is usually accompanied by a post implantation anneal to repair the structure. Defects created in these processes may also persist in fully processed devices. Previous electron paramagnetic resonance (EPR) and EDMR studies have identified a series of nitrogen related defect complexes in N implanted silicon carbide (SiC) wafers.[1–3] This study examines the formation energy, charge transition levels and barriers to interconversion of two such defects: NCVSi and the NSiVC. The NCVSi center is favoured in a variety of charge states for a wide range of Fermi level positions. We found, however, that for Fermi level positions close to the valence band of 4H-SiC the NCVSi center is a favoured conformation with barriers to rearrangement of +1.2 eV and +3.8 eV in the neutral and +2 charge states, respectively.
Type: | Article |
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Title: | Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study |
DOI: | 10.4028/www.scientific.net/MSF.858.257 |
Publisher version: | https://doi.org/10.4028/www.scientific.net/MSF.858... |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Defect Simulations, Density Functional Theory, Implantation Defects, Nitrogen Defects, Nudge Elastic Band |
UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
URI: | https://discovery.ucl.ac.uk/id/eprint/10074506 |
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