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Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

Zhang, Y; Davis, G; Fonseka, HA; Velichko, A; Gustafsson, A; Godde, T; Saxena, D; ... Liu, H; + view all (2019) Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement. ACS Nano , 13 (5) pp. 5931-5938. 10.1021/acsnano.9b01775. Green open access

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Abstract

Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

Type: Article
Title: Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acsnano.9b01775
Publisher version: https://doi.org/10.1021/acsnano.9b01775
Language: English
Additional information: Copyright © 2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: III−V−V, carrier collection, carrier confinement, laser, nanowire, quantum well
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/10074089
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