Chen, F;
Wei, K;
Sha, WEI;
Huang, JZ;
(2018)
Hole mobility model for Si double-gate junctionless transistors.
In:
2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS).
IEEE: Haining, China.
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Abstract
In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band k · p Schrodinger equation and ¨ Poisson equation are solved self-consistently. The obtained wavefunctions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown.
| Type: | Proceedings paper |
|---|---|
| Title: | Hole mobility model for Si double-gate junctionless transistors |
| Event: | 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) |
| Location: | Haining, China |
| Dates: | 14-16 December 2017 |
| ISBN-13: | 9781538612385 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/EDAPS.2017.8277054 |
| Publisher version: | https://doi.org/10.1109/EDAPS.2017.8277054 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Ionized impurity scattering , junctionless (JL) , mobility , screening , surface roughness , ultra-thin body |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10068594 |
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