Zhang, B;
Wei, W-Q;
Wang, J-H;
Wang, H-L;
Zhao, Z;
Liu, L;
Cong, H;
... Zhang, J-J; + view all
(2019)
O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy.
AIP Advances
, 9
(1)
, Article 015331. 10.1063/1.5065527.
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Liu_O-band InAs or GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy_VoR.pdf - Published Version Download (4MB) | Preview |
Abstract
Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum-dot micropillar is as low as 20 μW with the pillar diameter of 15 μm. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 °C.
| Type: | Article |
|---|---|
| Title: | O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.5065527 |
| Publisher version: | https://doi.org/10.1063/1.5065527 |
| Language: | English |
| Additional information: | © 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10068415 |
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