Kim, D;
Chan, S;
Tang, M;
Wu, J;
Liu, H;
(2018)
The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells.
In:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
(pp. pp. 2759-2762).
IEEE
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Abstract
The effects of direct, delta, and modulation Si QD doping on InAs/GaAs QDSCs are studied. The PL, EQE, and J-V characterisation results show a clear relationship between the doping methods and the non-radiative recombination. All doped QDSCs exhibited increase in the V-{mathbf{OC}} due to{reduced thermal coupling from QD Si doping. Delta and modulation-doped QDSCs exhibit further improvements in V-{mathbf{OC}} due to reduced non-radiative recombination. Moreover, the modulation-doped QDSC shows improvements in both the current density and the voltage compared with the directly doped QDSC.
| Type: | Proceedings paper |
|---|---|
| Title: | The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells |
| Event: | 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10-15 June 2018, Waikoloa Village, HI, USA |
| ISBN-13: | 9781538685297 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/PVSC.2018.8548028 |
| Publisher version: | https://doi.org/10.1109/PVSC.2018.8548028 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Doping , Silicon , Gallium arsenide , Quantum dots , Photovoltaic cells , Epitaxial layers , Radiative recombination, Quantum dots , intermediate band , Si doping , molecular beam epitaxy |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10068089 |
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