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The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells

Kim, D; Chan, S; Tang, M; Wu, J; Liu, H; (2018) The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). (pp. pp. 2759-2762). IEEE Green open access

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Abstract

The effects of direct, delta, and modulation Si QD doping on InAs/GaAs QDSCs are studied. The PL, EQE, and J-V characterisation results show a clear relationship between the doping methods and the non-radiative recombination. All doped QDSCs exhibited increase in the V-{mathbf{OC}} due to{reduced thermal coupling from QD Si doping. Delta and modulation-doped QDSCs exhibit further improvements in V-{mathbf{OC}} due to reduced non-radiative recombination. Moreover, the modulation-doped QDSC shows improvements in both the current density and the voltage compared with the directly doped QDSC.

Type: Proceedings paper
Title: The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells
Event: 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10-15 June 2018, Waikoloa Village, HI, USA
ISBN-13: 9781538685297
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/PVSC.2018.8548028
Publisher version: https://doi.org/10.1109/PVSC.2018.8548028
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Doping , Silicon , Gallium arsenide , Quantum dots , Photovoltaic cells , Epitaxial layers , Radiative recombination, Quantum dots , intermediate band , Si doping , molecular beam epitaxy
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10068089
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