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III-V quantum-dot lasers monolithically grown on silicon

Liao, M; Chen, S; Park, J-S; Seeds, A; Liu, H; (2018) III-V quantum-dot lasers monolithically grown on silicon. Semiconductor Science and Technology , 33 (12) 10.1088/1361-6641/aae6a5. Green open access

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Abstract

The monolithic growth of III–V semiconductor lasers on Si remains the 'holy grail' for full-scale deployment of Si photonics with reduced cost and added flexibility. Semiconductor lasers with active regions made from quantum dots (QDs) have shown superior device performance over conventional quantum well (QW) counterparts and offer new functionalities. Furthermore, there are other advantages of QDs for monolithic III–V-on-Si integration over QWs, such as QD devices being less sensitive to defects. It is, therefore, not surprising that the past decade has seen rapid progress in research on monolithic III–V QD lasers on Si, with a view to leveraging the benefits of QD gain region technology while benefitting from the economics of scale enabled by monolithic growth. This review has a special focus on O-band III–V QD lasers monolithically grown on Si for Si photonic optical interconnects, including Fabry–Perot lasers, distributed-feedback laser array, and micro-lasers. The successes and challenges for developing monolithic III–V lasers on Si are discussed.

Type: Article
Title: III-V quantum-dot lasers monolithically grown on silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6641/aae6a5
Publisher version: https://doi.org/10.1088/1361-6641/aae6a5
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10066157
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