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Long-wavelength InAs/GaAs quantum-dot light emitting sources monolithically grown on Si substrate

Chen, S; Tang, M; Wu, J; Jiang, Q; Dorogan, V; Benamara, M; Mazur, YI; ... Liu, H; + view all (2015) Long-wavelength InAs/GaAs quantum-dot light emitting sources monolithically grown on Si substrate. Photonics , 2 (2) pp. 646-658. 10.3390/photonics2020646. Green open access

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Abstract

Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates.

Type: Article
Title: Long-wavelength InAs/GaAs quantum-dot light emitting sources monolithically grown on Si substrate
Open access status: An open access version is available from UCL Discovery
DOI: 10.3390/photonics2020646
Publisher version: https://doi.org/10.3390/photonics2020646
Language: English
Additional information: This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Keywords: quantum dot; semiconductor lasers; superluminescent light-emitting diodes; Si photonics; monolithic integration
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10063326
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