Zhao, Y;
Li, W;
Wang, Z;
Li, Q;
He, G;
(2017)
Electric field induced slanting growth of silicon nanowires with enhanced hydrophobic property.
Materials Letters
, 198
pp. 8-11.
10.1016/j.matlet.2017.03.167.
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Abstract
The etching process of Si nanowires under DC electric field was studied in this work. Interestingly, the growth direction of silicon nanowires became slanting when applied with DC electric intensity of 600 V/m, which greatly influenced the surface wettability ascribed to the variation of surface morphologies. The contact angle of slant Si nanowire was enhanced compared with vertical growth Si nanowire (132.4° vs. 86.8°).
| Type: | Article |
|---|---|
| Title: | Electric field induced slanting growth of silicon nanowires with enhanced hydrophobic property |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.matlet.2017.03.167 |
| Publisher version: | https://doi.org/10.1016/j.matlet.2017.03.167 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Microstructure; Si Semiconductors; Electric field; Surfaces |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10060178 |
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