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High-performance Inas/gaas Quantum-dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

Liao, M; Tang, M; Chen, S; Wu, J; Liu, H; (2017) High-performance Inas/gaas Quantum-dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics. In: Proceedings of the 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE: Munich, Germany. Green open access

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Abstract

Summary form only given. III-V lasers grown on Si is the most promising solution to light sources on Si platform. The silicon-based telecommunications-wavelength III-V lasers with low threshold current density, high output power, and long lifetime will be presented.

Type: Proceedings paper
Title: High-performance Inas/gaas Quantum-dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics
Event: 2017 Conference on Lasers and Electro-Optics Europe / European Quantum Electronics Conference (CLEO/Europe-EQEC)
Location: Munich, GERMANY
Dates: 25 June 2017 - 29 June 2017
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/CLEOE-EQEC.2017.8086357
Publisher version: https://doi.org/10.1109/CLEOE-EQEC.2017.8086357
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Silicon, Quantum dot lasers, Substrates, Photonics, Threshold current, Optimized production technology
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10059774
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