Liao, M;
Tang, M;
Chen, S;
Wu, J;
Liu, H;
(2017)
High-performance Inas/gaas Quantum-dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics.
In:
Proceedings of the 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
IEEE: Munich, Germany.
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Abstract
Summary form only given. III-V lasers grown on Si is the most promising solution to light sources on Si platform. The silicon-based telecommunications-wavelength III-V lasers with low threshold current density, high output power, and long lifetime will be presented.
| Type: | Proceedings paper |
|---|---|
| Title: | High-performance Inas/gaas Quantum-dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics |
| Event: | 2017 Conference on Lasers and Electro-Optics Europe / European Quantum Electronics Conference (CLEO/Europe-EQEC) |
| Location: | Munich, GERMANY |
| Dates: | 25 June 2017 - 29 June 2017 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/CLEOE-EQEC.2017.8086357 |
| Publisher version: | https://doi.org/10.1109/CLEOE-EQEC.2017.8086357 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Silicon, Quantum dot lasers, Substrates, Photonics, Threshold current, Optimized production technology |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10059774 |
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