Zeng, H;
Yu, X;
Fonseka, HA;
Gott, JA;
Tang, M;
Zhang, Y;
Boras, G;
... Liu, H; + view all
(2018)
Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
Nano Letters
, 18
(10)
pp. 6397-6403.
10.1021/acs.nanolett.8b02760.
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Abstract
The integration of optically active III–V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the growth of GaAs/Ge core–shell nanowires on Si substrates by molecular beam epitaxy and investigate the radial and axial Ge epitaxy on GaAs nanowires in detail. High-quality core–shell nanowires with smooth side facets and dislocation-free, sharp interfaces are achieved. It is found that the low shell growth temperature leads to smoother side facets, while higher shell growth temperatures lead to more relaxed structures with significantly faceted sidewalls. The possibility of forming a III–V/IV heterostructure nanowire with a Ge section development in the axial direction of a GaAs nanowire using a Ga droplet is also revealed. These nanowires provide an ideal platform for nanoscale III–V/IV combination, which is promising for highly integrated photonic and electronic hybrid devices on a single chip.
| Type: | Article |
|---|---|
| Title: | Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/acs.nanolett.8b02760 |
| Publisher version: | http://dx.doi.org/10.1021/acs.nanolett.8b02760 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanowires, III-V/group IV, hybrid heterostructure, MBE, single-crystalline, FIELD-EFFECT TRANSISTORS, LIGHT-EMITTING DIODE, SILICON, HETEROSTRUCTURES, ELECTRONICS, DETECTORS, GERMANIUM, GROWTH, BAND |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10059669 |
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