Huang, J;
Guo, D;
Deng, Z;
Chen, W;
Liu, H;
Wu, J;
Chen, B;
(2018)
Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate.
Journal of Lightwave Technology
, 36
(18)
pp. 4033-4038.
10.1109/JLT.2018.2859250.
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Abstract
Mid-infrared photodetector based on submonolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this paper. Both the optical and electrical characteristics of the SML quantum dot quantum cascade photodetectors (QD-QCD) were analyzed quantitatively. The performances of these devices were compared with that on native GaAs substrate. A large resistance-area (R0A ) product of 1.13 × 10 7 Ω.cm 2 is achieved at 77 K for the silicon-based devices, which is only roughly one order less than that on GaAs substrate. The device shows a normal-incident peak responsivity of 0.59 mA/W under zero bias at the wavelength of 6.2 μm at 77 K, indicating a photovoltaic operation mode. Johnson noise limited specific detectivity is 3 × 10 10 cm·Hz 1/2 /W at 77 K, with photoresponse up to 100 K. These results suggest that the silicon-based QD-QCD in this paper is a very promising candidate for large format mid-infrared focal plane array and mid-infrared silicon photonics applications.
| Type: | Article |
|---|---|
| Title: | Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/JLT.2018.2859250 |
| Publisher version: | http://dx.doi.org/10.1109/JLT.2018.2859250 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, Infrared photodetector, quantum cascade, quantum dots, silicon substrate, DETECTORS, SOI, SI |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10058951 |
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