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Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon

Chen, S; Wu, J; Li, W; Liao, M; Tang, M; Jiang, Q; Shutts, S; ... Liu, H; + view all (2016) Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon. In: 2016 International Semiconductor Laser Conference (ISLC). (pp. ThA4). IEEE Green open access

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Abstract

We demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithically grown on silicon substrates with a low threshold current density of 62.5 Acm -2 , a room temperature output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.

Type: Proceedings paper
Title: Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon
Event: 25th International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan
Location: Kobe, JAPAN
Dates: 12 September 2016 - 15 September 2016
ISBN-13: 9784885523069
Open access status: An open access version is available from UCL Discovery
Publisher version: https://ieeexplore.ieee.org/document/7765702/
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Quantum dot laser, Si photonics, monolithic integration
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10055377
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