Chen, S;
Wu, J;
Li, W;
Liao, M;
Tang, M;
Jiang, Q;
Shutts, S;
... Liu, H; + view all
(2016)
Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon.
In:
2016 International Semiconductor Laser Conference (ISLC).
(pp. ThA4).
IEEE
Preview |
Text
ISLC2016_siming.pdf - Accepted Version Download (250kB) | Preview |
Abstract
We demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithically grown on silicon substrates with a low threshold current density of 62.5 Acm -2 , a room temperature output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.
| Type: | Proceedings paper |
|---|---|
| Title: | Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown On Silicon |
| Event: | 25th International Semiconductor Laser Conference (ISLC), 12-15 September 2016, Kobe, Japan |
| Location: | Kobe, JAPAN |
| Dates: | 12 September 2016 - 15 September 2016 |
| ISBN-13: | 9784885523069 |
| Open access status: | An open access version is available from UCL Discovery |
| Publisher version: | https://ieeexplore.ieee.org/document/7765702/ |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Quantum dot laser, Si photonics, monolithic integration |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10055377 |
Loading...
Loading...Loading...Loading...Archive Staff Only
 |
View Item |
