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Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon

Guo, D; Jiang, Q; Tang, M; Chen, S; Mazur, YI; Maidaniuk, Y; Benamara, M; ... Wu, J; + view all (2018) Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon. Semiconductor Science and Technology , 33 (9) , Article 094009. 10.1088/1361-6641/aad83c. Green open access

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Abstract

An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.

Type: Article
Title: Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6641/aad83c
Publisher version: https://doi.org/10.1088/1361-6641/aad83c
Language: English
Additional information: Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: photodetectors, infrared, silicon, quantum dots, molecular beam epitaxy
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10055368
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