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Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon

Li, W; Chen, S; Tang, M; Wu, J; Hogg, R; Seeds, A; Liu, H; (2018) Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon. Journal of Applied Physics , 123 (21) , Article 215303. 10.1063/1.5011161. Green open access

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Abstract

In this work, we give a direct interpretation of micrographs of the 60° and 90° defect core at the GaAs/Si interface using aberration corrected scanning transmission electron microscopy. We investigate the post-growth annealing effects on dislocation rearrangement at the interface as well as the threading dislocations in buffer layers; finally, the density of threading dislocations has been calculated as a function of annealing temperature.

Type: Article
Title: Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.5011161
Publisher version: https://doi.org/10.1063/1.5011161
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10052901
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