Li, W;
Chen, S;
Tang, M;
Wu, J;
Hogg, R;
Seeds, A;
Liu, H;
(2018)
Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon.
Journal of Applied Physics
, 123
(21)
, Article 215303. 10.1063/1.5011161.
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Abstract
In this work, we give a direct interpretation of micrographs of the 60° and 90° defect core at the GaAs/Si interface using aberration corrected scanning transmission electron microscopy. We investigate the post-growth annealing effects on dislocation rearrangement at the interface as well as the threading dislocations in buffer layers; finally, the density of threading dislocations has been calculated as a function of annealing temperature.
| Type: | Article |
|---|---|
| Title: | Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.5011161 |
| Publisher version: | https://doi.org/10.1063/1.5011161 |
| Language: | English |
| Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10052901 |
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