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Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

Loto, O; Florentin, M; Masante, C; Donato, N; Hicks, ML; Pakpour-Tabrizi, AC; Jackman, RB; ... Gheeraert, E; + view all (2018) Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors. IEEE Transactions on Electron Devices , 65 (8) pp. 3361-3364. 10.1109/TED.2018.2847340. Green open access

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Abstract

This paper shows the effect of performing consecutive measurement prior to negative bias stress instability (NBSI) on diamond metal-oxide-semiconductor capacitor (MOSCAP). For the first time, time-dependent stress tests have been carried out in order to investigate the stability of the flatband voltage (VFB) of MOSCAPs through capacitance-voltage (CV) measurements. Two tests have been performed. In the first test, consecutive CV measurements with the device biased from deep depletion to the accumulation regime were performed to monitor the recovery of the VFB. In the second test, NBSI technique has been applied. VFB stability has been measured by means of a time-dependent bias stress in which the device was polarized at a fixed negative voltage for a specific time interval prior to performing the next CV measurement. As VFB is directly connected to the effective oxide charge (Neff), the two different tests allowed the extraction of total amount of Neff that interfered during the measurements. The result observed shows that the postoxidation annealing process induces a strong enhancement of the MOSCAP stability together with a decrease of Neff.

Type: Article
Title: Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/TED.2018.2847340
Publisher version: http://dx.doi.org/10.1109/TED.2018.2847340
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Diamond, flatband voltage, metal–oxide–semiconductor interface, oxide reliability
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10052896
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