Shi, LX;
Wang, ZS;
Huang, Z;
Sha, WEI;
Wang, H;
Zhou, Z;
(2018)
The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells.
AIP Advances
, 8
(2)
, Article 025312. 10.1063/1.5021293.
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Abstract
Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V) curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.
Type: | Article |
---|---|
Title: | The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1063/1.5021293 |
Publisher version: | https://doi.org/10.1063/1.5021293 |
Language: | English |
Additional information: | © Author(s) 2018. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) License (http://creativecommons.org/licenses/by/4.0/). |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science |
URI: | https://discovery.ucl.ac.uk/id/eprint/10052782 |



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