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Composition measurement of epitaxial ScxGa1-xN films

Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; ... Moram, MA; + view all (2016) Composition measurement of epitaxial ScxGa1-xN films. Semiconductor Science and Technology , 31 , Article 064002. 10.1088/0268-1242/31/6/064002. Green open access

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Abstract

Four different methods for measuring the compositions of epitaxial Sc x Ga1−x N films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial Sc x Ga1−x N films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.

Type: Article
Title: Composition measurement of epitaxial ScxGa1-xN films
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0268-1242/31/6/064002
Publisher version: https://doi.org/10.1088/0268-1242/31/6/064002
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ScGaN, Rutherford backscattering, x-ray photoelectron spectroscopy, composition measurement, SCANDIUM NITRIDE FILMS, THIN-FILMS, BAND-GAP, INGAN EPILAYERS, GROWTH, SCGAN, MICROSTRUCTURE, SURFACE, PLASMA, LAYERS
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10048282
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