Cedola, AP; Kim, D; Tibaldi, A; Tang, M; Khalili, A; Wu, J; Liu, H; Cedola, AP; Kim, D; Tibaldi, A; Tang, M; Khalili, A; Wu, J; Liu, H; Cappelluti, F; - view fewer (2018) Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells. International Journal of Photoenergy , 2018 , Article 7215843. 10.1155/2018/7215843.

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Abstract

This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.

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