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An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs 1−x Sb x Quantum Dot Solar Cells

Cheng, Y; Meleco, AJ; Roeth, AJ; Whiteside, VR; Debnath, MC; Mishima, TD; Santos, MB; ... Sellers, IR; + view all (2018) An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs 1−x Sb x Quantum Dot Solar Cells. IEEE Journal of Photovoltaics , 8 (2) pp. 487-492. 10.1109/JPHOTOV.2017.2779325. Green open access

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Abstract

An InAs/GaAs0.86 Sb 0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density–voltage (J–V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.

Type: Article
Title: An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs 1−x Sb x Quantum Dot Solar Cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JPHOTOV.2017.2779325
Publisher version: https://doi.org/10.1109/JPHOTOV.2017.2779325
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Defects, electroluminescence (EL), nonradiative, recombination, Temperature measurement, Gallium arsenide, Photovoltaic cells, Temperature control, Resistance, Quantum dots, Strain
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10044900
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