III-V Quantum Dot Lasers Epitaxially Grown on Si

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III-V Quantum Dot Lasers Epitaxially Grown on Si

Chen, S; Tang, M; Wu, J; Liao, M; Seeds, A; Liu, H; (2017) III-V Quantum Dot Lasers Epitaxially Grown on Si. In: Proceedings of 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE: Singapore. Green open access

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Abstract

Monolithic integration of semiconductor lasers on silicon platform is the ultimate solution for creating complex optoelectronic circuits, which is the key to chip-to-chip and system-to-system communications. The direct epitaxial integration of III-V semiconductor materials on Si or Ge is one of the most promising approaches for the fabrication of electrically pumped light sources on a Si platform, promising low-cost, high-yield and large-scale deployment of silicon photonics [1], [2]. However, monolithic integration technique faces significant challenges because of the large material dissimilarity between III-V and Group IV materials, such as lattice mismatch, thermal expansion coefficient differences, and polar versus nonpolar surfaces [2], [3]. These differences tend to produce various types of defects, such as, antiphase boundaries (APBs), threading dislocations (TDs), and microcracks, which all generate nonradiative recombination centers and dramatically undermine the promise of III-V materials. Recently, quantum dots (QDs) structure is becoming widely used in active layer in semiconductor lasers due to their advantages of low threshold current density and temperature insensitive operation [4], [5]. Also, QD structures have attracted increasing attention for the monolithic III-V/Si integration due to their enhanced tolerance to defects and special capability of filtering the APBs and threading dislocations [6], [7]. In this paper, we review our recent progress made in the direct growth of III-V QD lasers on Si substrates.

Type:	Proceedings paper
Title:	III-V Quantum Dot Lasers Epitaxially Grown on Si
Event:	Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
Location:	Singapore, SINGAPORE
Dates:	31 July 2017 - 04 August 2017
ISBN-13:	978-1-5090-6291-1
Open access status:	An open access version is available from UCL Discovery
DOI:	10.1109/CLEOPR.2017.8119104
Publisher version:	http://doi.org/10.1109/CLEOPR.2017.8119104
Language:	English
Additional information:	This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords:	Silicon, Quantum dot lasers, Substrates, Pump lasers, Epitaxial growth
UCL classification:	UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI:	https://discovery.ucl.ac.uk/id/eprint/10041791