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Fabrication of ultralow-density quantum dots by droplet etching epitaxy

Wu, J; Wang, ZM; Li, X; Mazur, YI; Salamo, GJ; (2017) Fabrication of ultralow-density quantum dots by droplet etching epitaxy. Journal of Materials Research , 32 (21) pp. 4095-4101. 10.1557/jmr.2017.408. Green open access

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Abstract

Isolated single quantum dots (QDs) enable the investigation of quantum-optics phenomena for the application of quantum information technologies. In this work, ultralow-density InAs QDs are grown by combining droplet etching epitaxy and the conventional epitaxy growth mode. An extreme low density of QDs (∼106 cm−2) is realized by creating low-density self-assembled nanoholes with the high temperature droplet etching epitaxy technique and then nanohole-filling. The preferred nucleation of QDs in nanoholes has been explained by a theoretical model. Atomic force microscopy and the photoluminescence technique are used to investigate the morphological and optical properties of the QD samples. By varying In coverages, the size of InAs QDs can be controlled. Moreover, with a thin GaAs cap layer, the position of QDs remains visible on the sample surface. Such a low density and surface signature of QDs make this growth method promising for single QD investigation and single dot device fabrication.

Type: Article
Title: Fabrication of ultralow-density quantum dots by droplet etching epitaxy
Open access status: An open access version is available from UCL Discovery
DOI: 10.1557/jmr.2017.408
Publisher version: http://doi.org/10.1557/jmr.2017.408
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: molecular beam epitaxy (MBE), nanostructure, self-assembly
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
URI: https://discovery.ucl.ac.uk/id/eprint/10040370
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