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Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates

Gonzalez Burguete, CS; (2017) Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates. Presented at: Barlow Lecture, UCL Institute of Education, 20 Bedford Way. Green open access

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Abstract

p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.

Type: Poster
Title: Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates
Event: Barlow Lecture
Location: UCL Institute of Education, 20 Bedford Way
Open access status: An open access version is available from UCL Discovery
Language: English
Keywords: Superlattice, infrared.
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10039597
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