eprintid: 1561991 rev_number: 50 eprint_status: archive userid: 608 dir: disk0/01/56/19/91 datestamp: 2017-07-09 00:44:44 lastmod: 2021-09-17 22:08:33 status_changed: 2018-09-04 15:46:56 type: article metadata_visibility: show creators_name: Liao, M creators_name: Chen, S creators_name: Huo, S creators_name: Chen, S creators_name: Wu, J creators_name: Tang, M creators_name: Kennedy, K creators_name: Li, W creators_name: Kumar, S creators_name: Martin, M creators_name: Baron, T creators_name: Jin, C creators_name: Ross, I creators_name: Seeds, A creators_name: Liu, H title: Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 divisions: C06 divisions: F64 keywords: Molecular beam epitaxy, quantum dots, semiconductor lasers, silicon photonics, focused ion beam note: This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/ abstract: In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology. date: 2017-11 date_type: published publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC official_url: http://dx.doi.org/10.1109/JSTQE.2017.2693025 oa_status: green full_text_type: pub language: eng primo: open primo_central: open_green article_type_text: Article verified: verified_manual elements_id: 1299647 doi: 10.1109/JSTQE.2017.2693025 lyricists_name: Chen, Siming lyricists_name: Huo, Suguo lyricists_name: Liao, Mengya lyricists_name: Liu, Huiyun lyricists_name: Seeds, Alwyn lyricists_name: Tang, Mingchu lyricists_name: Wu, Jiang lyricists_id: SCHEA37 lyricists_id: SHUOX98 lyricists_id: MLIAO16 lyricists_id: HLIUX22 lyricists_id: AJSEE43 lyricists_id: TANGX88 lyricists_id: JWUXX91 full_text_status: public publication: IEEE Journal of Selected Topics in Quantum Electronics volume: 23 number: 6 article_number: 1900910 pages: 10 issn: 1558-4542 citation: Liao, M; Chen, S; Huo, S; Chen, S; Wu, J; Tang, M; Kennedy, K; ... Liu, H; + view all <#> Liao, M; Chen, S; Huo, S; Chen, S; Wu, J; Tang, M; Kennedy, K; Li, W; Kumar, S; Martin, M; Baron, T; Jin, C; Ross, I; Seeds, A; Liu, H; - view fewer <#> (2017) Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon. IEEE Journal of Selected Topics in Quantum Electronics , 23 (6) , Article 1900910. 10.1109/JSTQE.2017.2693025 <https://doi.org/10.1109/JSTQE.2017.2693025>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/1561991/1/07898434.pdf