@article{discovery1558908,
            year = {2008},
           title = {Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept},
         journal = {Applied Physics Letters},
          volume = {92},
           month = {January},
          number = {2},
            note = {This is the published version of record. For information on re-use, please refer to the publisher's terms and conditions.},
             url = {https://doi.org/10.1063/1.2832771},
        abstract = {Here, we report on the control of domain wall pinning at notch features patterned in Permalloy
planar nanowires by selecting the micromagnetic configuration of the domain wall using a
transverse magnetic field. The domain wall behavior was investigated both experimentally using
focused magneto-optic Kerr effect measurements of lithographically patterned nanowires and with
micromagnetic simulations. The pinning behavior observed is utilized in a concept for multibit
memory cells applicable as the free layer in magnetic random access memory where the domain
structure is defined by the location of domain walls that either pin or passby pinning structures
depending upon the domain wall configuration selected.},
            issn = {1077-3118},
          author = {Atkinson, D and Eastwood, DS and Bogart, LK}
}