TY  - JOUR
PB  - IOP PUBLISHING LTD
ID  - discovery1555789
N2  - Selective doping of quantum dots is often used to improve efficiency of intermediate band solar cells (IBSC) due to IR harvesting and built-in-dot charge. To investigate the effects of the built-in-dot charge on recombination processes and device performance InAs/GaAs quantum dot IBSCs with direct Si doping in the quantum dots are fabricated, and the I?V characteristics and transients of the open circuit voltage and short circuit current are measured. The decay times of both the open circuit voltage and the short circuit current increase as the concentration of n-type doping increases in the quantum dots. The observed increase in the charge carrier lifetime is attributed to suppressed recombination of electron?hole pairs through the states of quantum dots and shrinking the depletion layer. This is supported by measurements of both photovoltage and photoluminescence spectra.
KW  - science & technology
KW  -  physical sciences
KW  -  physics
KW  -  applied
KW  -  physics
KW  -  quantum dots
KW  -  solar cells
KW  -  III-V semiconductors
KW  -  carrier lifetime
KW  -  recombination processes
KW  -  intermediate-band
KW  -  carrier emission
KW  -  spectroscopy
KW  -  efficiency
KW  -  semiconductors
KW  -  dependence
KW  -  voltage
EP  - 10
AV  - public
Y1  - 2017/04/26/
TI  - Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells
SN  - 1361-6463
UR  - http://dx.doi.org/10.1088/1361-6463/aa61d4
A1  - Kondratenko, S
A1  - Yakovliev, A
A1  - Iliash, S
A1  - Mazur, Y
A1  - Ware, M
A1  - Lam, P
A1  - Tang, M
A1  - Wu, J
A1  - Liu, H
A1  - Salamo, G
JF  - Journal of Physics D: Applied Physics
VL  - 50
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
IS  - 16
ER  -