eprintid: 1541016
rev_number: 34
eprint_status: archive
userid: 608
dir: disk0/01/54/10/16
datestamp: 2017-03-01 14:25:44
lastmod: 2021-09-20 00:28:45
status_changed: 2017-03-01 14:26:44
type: article
metadata_visibility: show
creators_name: Jurczak, P
creators_name: Sablon, KA
creators_name: Gutiérrez, M
creators_name: Liu, H
creators_name: Wu, J
title: 2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
keywords: Infrared, Photodiodes, Epitaxy, Interfacial misfit array, Short-wavelength
note: Copyright © 2017. This manuscript version is published under a Creative Commons Attribution Non-commercial Non-derivative 4.0 International licence (CC BY-NC-ND 4.0). This licence allows you to share, copy, distribute and transmit the work for personal and non-commercial use providing author and publisher attribution is clearly stated. Further details about CC BY licences are available at http://creativecommons.org/licenses/by/4.0. Access may be initially restricted by the publisher.
abstract: In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications.
date: 2017-03
date_type: published
official_url: http://doi.org/10.1016/j.infrared.2017.02.001
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1208417
doi: 10.1016/j.infrared.2017.02.001
lyricists_name: Liu, Huiyun
lyricists_name: Wu, Jiang
lyricists_id: HLIUX22
lyricists_id: JWUXX91
actors_name: Wu, Jiang
actors_id: JWUXX91
actors_role: owner
full_text_status: public
publication: Infrared Physics & Technology
volume: 81
pagerange: 320-324
issn: 1350-4495
citation:        Jurczak, P;    Sablon, KA;    Gutiérrez, M;    Liu, H;    Wu, J;      (2017)    2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique.                   Infrared Physics & Technology , 81    pp. 320-324.    10.1016/j.infrared.2017.02.001 <https://doi.org/10.1016/j.infrared.2017.02.001>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1541016/3/Wu_InGaAs%20photodetectors_No%20mark.pdf