eprintid: 1541016 rev_number: 34 eprint_status: archive userid: 608 dir: disk0/01/54/10/16 datestamp: 2017-03-01 14:25:44 lastmod: 2021-09-20 00:28:45 status_changed: 2017-03-01 14:26:44 type: article metadata_visibility: show creators_name: Jurczak, P creators_name: Sablon, KA creators_name: Gutiérrez, M creators_name: Liu, H creators_name: Wu, J title: 2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Infrared, Photodiodes, Epitaxy, Interfacial misfit array, Short-wavelength note: Copyright © 2017. This manuscript version is published under a Creative Commons Attribution Non-commercial Non-derivative 4.0 International licence (CC BY-NC-ND 4.0). This licence allows you to share, copy, distribute and transmit the work for personal and non-commercial use providing author and publisher attribution is clearly stated. Further details about CC BY licences are available at http://creativecommons.org/licenses/by/4.0. Access may be initially restricted by the publisher. abstract: In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications. date: 2017-03 date_type: published official_url: http://doi.org/10.1016/j.infrared.2017.02.001 oa_status: green full_text_type: other language: eng primo: open primo_central: open_green verified: verified_manual elements_id: 1208417 doi: 10.1016/j.infrared.2017.02.001 lyricists_name: Liu, Huiyun lyricists_name: Wu, Jiang lyricists_id: HLIUX22 lyricists_id: JWUXX91 actors_name: Wu, Jiang actors_id: JWUXX91 actors_role: owner full_text_status: public publication: Infrared Physics & Technology volume: 81 pagerange: 320-324 issn: 1350-4495 citation: Jurczak, P; Sablon, KA; Gutiérrez, M; Liu, H; Wu, J; (2017) 2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique. Infrared Physics & Technology , 81 pp. 320-324. 10.1016/j.infrared.2017.02.001 <https://doi.org/10.1016/j.infrared.2017.02.001>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/1541016/3/Wu_InGaAs%20photodetectors_No%20mark.pdf