TY  - JOUR
N1  - Copyright © 2017. This manuscript version is published under a Creative Commons Attribution Non-commercial Non-derivative 4.0 International licence (CC BY-NC-ND 4.0). This licence allows you to share, copy, distribute and transmit the work for personal and non-commercial use providing author and publisher attribution is clearly stated. Further details about CC BY licences are available at http://creativecommons.org/licenses/by/4.0. Access may be initially restricted by the publisher.
TI  - 2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique
EP  - 324
VL  - 81
AV  - public
Y1  - 2017/03//
SP  - 320
JF  - Infrared Physics & Technology
KW  - Infrared
KW  -  Photodiodes
KW  -  Epitaxy
KW  -  Interfacial misfit array
KW  -  Short-wavelength
A1  - Jurczak, P
A1  - Sablon, KA
A1  - Gutiérrez, M
A1  - Liu, H
A1  - Wu, J
ID  - discovery1541016
N2  - In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications.
SN  - 1350-4495
UR  - http://doi.org/10.1016/j.infrared.2017.02.001
ER  -