eprintid: 1539032
rev_number: 23
eprint_status: archive
userid: 608
dir: disk0/01/53/90/32
datestamp: 2017-02-15 16:25:45
lastmod: 2021-10-06 22:31:13
status_changed: 2017-02-15 16:25:45
type: article
metadata_visibility: show
creators_name: Yi, Q
creators_name: Wu, J
creators_name: Zhao, J
creators_name: Wang, H
creators_name: Hu, J
creators_name: Dai, X
creators_name: Zou, G
title: Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
keywords: CZTGeSSe, bandgap tunable, polymer-assisted deposition, solar cells, solution processing
note: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.6b13683.
abstract: Bandgap engineering of kesterite Cu2Zn(Sn, Ge)(S, Se)4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu2Zn(Sn, Ge)(S, Se)4 thin films with tunable bandgap. The bandgap of Cu2Zn(Sn, Ge)(S, Se)4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu2Zn(Sn, Ge)(S, Se)4 thin films exhibits a hall coefficient of +137 cm(3)/C. The resistivity, concentration and carrier mobility of the Cu2ZnSn(S, Se)4 thin film are 3.17 ohm·cm, 4.5 × 10(16) cm(-3), and 43 cm(2)/(V·S) at room temperature, respectively. Moreover, the Cu2ZnSn(S, Se)4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu2Zn(Sn, Ge)(S, Se)4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.
date: 2017-01-18
date_type: published
official_url: http://dx.doi.org/10.1021/acsami.6b13683
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1201372
doi: 10.1021/acsami.6b13683
lyricists_name: Wu, Jiang
lyricists_id: JWUXX91
actors_name: Wu, Jiang
actors_id: JWUXX91
actors_role: owner
full_text_status: public
publication: ACS Applied Materials & Interfaces
volume: 9
number: 2
pagerange: 1602-1608
event_location: United States
issn: 1944-8252
citation:        Yi, Q;    Wu, J;    Zhao, J;    Wang, H;    Hu, J;    Dai, X;    Zou, G;      (2017)    Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.                   ACS Applied Materials & Interfaces , 9  (2)   pp. 1602-1608.    10.1021/acsami.6b13683 <https://doi.org/10.1021/acsami.6b13683>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1539032/1/Accepted%20version.pdf