TY  - JOUR
A1  - Yi, Q
A1  - Wu, J
A1  - Zhao, J
A1  - Wang, H
A1  - Hu, J
A1  - Dai, X
A1  - Zou, G
JF  - ACS Applied Materials & Interfaces
SN  - 1944-8252
UR  - http://dx.doi.org/10.1021/acsami.6b13683
N1  - This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.6b13683.
IS  - 2
VL  - 9
SP  - 1602
KW  - CZTGeSSe
KW  -  bandgap tunable
KW  -  polymer-assisted deposition
KW  -  solar cells
KW  -  solution processing
ID  - discovery1539032
N2  - Bandgap engineering of kesterite Cu2Zn(Sn, Ge)(S, Se)4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu2Zn(Sn, Ge)(S, Se)4 thin films with tunable bandgap. The bandgap of Cu2Zn(Sn, Ge)(S, Se)4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu2Zn(Sn, Ge)(S, Se)4 thin films exhibits a hall coefficient of +137 cm(3)/C. The resistivity, concentration and carrier mobility of the Cu2ZnSn(S, Se)4 thin film are 3.17 ohm·cm, 4.5 × 10(16) cm(-3), and 43 cm(2)/(V·S) at room temperature, respectively. Moreover, the Cu2ZnSn(S, Se)4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu2Zn(Sn, Ge)(S, Se)4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.
EP  - 1608
AV  - public
Y1  - 2017/01/18/
TI  - Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition
ER  -