eprintid: 1529996
rev_number: 25
eprint_status: archive
userid: 608
dir: disk0/01/52/99/96
datestamp: 2017-05-12 12:04:32
lastmod: 2021-09-25 23:02:52
status_changed: 2017-05-12 12:04:32
type: article
metadata_visibility: show
creators_name: Profijt, HB
creators_name: Potts, SE
creators_name: Van De Sanden, MCM
creators_name: Kessels, WMM
title: Plasma-assisted atomic layer deposition: Basics, opportunities, and challenges
ispublished: pub
divisions: UCL
divisions: B04
divisions: C06
divisions: F56
note: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with -level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications. © 2011 American Vacuum Society.
date: 2011-09
date_type: published
official_url: http://doi.org/10.1116/1.3609974
oa_status: green
full_text_type: pub
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1193578
doi: 10.1116/1.3609974
lyricists_name: Potts, Stephen
lyricists_id: SEPOT20
actors_name: Waragoda Vitharana, Nimal
actors_id: NWARR44
actors_role: owner
full_text_status: public
publication: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
volume: 29
number: 5
issn: 0734-2101
citation:        Profijt, HB;    Potts, SE;    Van De Sanden, MCM;    Kessels, WMM;      (2011)    Plasma-assisted atomic layer deposition: Basics, opportunities, and challenges.                   Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 29  (5)      10.1116/1.3609974 <https://doi.org/10.1116/1.3609974>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1529996/1/Potts_1%252E3609974.pdf