eprintid: 149387
rev_number: 52
eprint_status: archive
userid: 608
dir: disk0/00/14/93/87
datestamp: 2010-10-28 22:05:56
lastmod: 2021-09-25 23:24:57
status_changed: 2012-07-10 10:16:13
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Chryssou, CE
creators_name: Kenyon, AJ
creators_name: Iwayama, TS
creators_name: Pitt, CW
creators_name: Hole, DE
title: Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
note: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Chryssou, CE and Kenyon, AJ and Iwayama, TS and Pitt, CW and Hole, DE (1999) Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films. Applied Physics Letters , 75 (14) 2011 – 2013 and may be found at http://link.aip.org/link/?apl/75/02011
abstract: Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for all samples was 0.5%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 μm (intra-4f transitions). Photoluminescence intensity at 1.53 μm increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 μm was observed for λPump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5% to 15%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.
date: 1999-10
official_url: http://dx.doi.org/10.1063/1.124899
vfaculties: VENG
oa_status: green
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_source: Scopus
elements_id: 19828
doi: 10.1063/1.124899
lyricists_name: Kenyon, Anthony
lyricists_name: Pitt, Christopher
lyricists_id: AJKEN86
lyricists_id: CWPIT98
full_text_status: public
publication: Applied Physics Letters
volume: 75
number: 14
pagerange: 2011 - 2013
issn: 0003-6951
citation:        Chryssou, CE;    Kenyon, AJ;    Iwayama, TS;    Pitt, CW;    Hole, DE;      (1999)    Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films.                   Applied Physics Letters , 75  (14)   2011 - 2013.    10.1063/1.124899 <https://doi.org/10.1063/1.124899>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/149387/1/149387_APL%2075-2011%201999.pdf