@article{discovery149387,
          volume = {75},
           month = {October},
           pages = {2011 -- 2013},
            note = {Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Chryssou, CE and Kenyon, AJ and Iwayama, TS and Pitt, CW and Hole, DE (1999) Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films. Applied Physics Letters , 75 (14) 2011 - 2013 and may be found at http://link.aip.org/link/?apl/75/02011},
         journal = {Applied Physics Letters},
          number = {14},
           title = {Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films},
            year = {1999},
          author = {Chryssou, CE and Kenyon, AJ and Iwayama, TS and Pitt, CW and Hole, DE},
        abstract = {Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5\% to 15\%; Er3+ concentration for all samples was 0.5\%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 {\ensuremath{\mu}}m (intra-4f transitions). Photoluminescence intensity at 1.53 {\ensuremath{\mu}}m increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 {\ensuremath{\mu}}m was observed for {\ensuremath{\lambda}}Pump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5\% to 15\%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.},
             url = {http://dx.doi.org/10.1063/1.124899},
            issn = {0003-6951}
}