eprintid: 149090
rev_number: 46
eprint_status: archive
userid: 608
dir: disk0/00/14/90/90
datestamp: 2010-10-28 20:37:34
lastmod: 2021-09-19 23:06:58
status_changed: 2012-07-10 14:11:34
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Ahmad, I
creators_name: Temple, MP
creators_name: Kallis, A
creators_name: Wojdak, M
creators_name: Oton, CJ
creators_name: Barbier, D
creators_name: Saleh, H
creators_name: Kenyon, AJ
creators_name: Loh, WH
title: Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
keywords: annealing, compressive strength, cracks, erbium, internal stresses, nanostructured materials, nanotechnology, optical films, photoluminescence, plasma CVD, silicon compounds, tensile strength, 1.54 MU-M, OPTICAL WAVE-GUIDES, ENERGY-TRANSFER, RICH SILICA, THIN-FILMS, M PHOTOLUMINESCENCE, SI NANOCRYSTALS, EXCITATION, HYDROGEN, DEPOSITION
note: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Ahmad, I and Temple, MP and Kallis, A and Wojdak, M and Oton, CJ and Barbier, D and Saleh, H and Kenyon, AJ and Loh, WH (2008) Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. Journal of Applied Physics, 104 (12) , Article 123108 and may be found at http://link.aip.org/link/?jap/104/123108
abstract: Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.
date: 2008-12-15
publisher: AMER INST PHYSICS
official_url: http://dx.doi.org/10.1063/1.3050324
vfaculties: VENG
oa_status: green
language: eng
primo: open
primo_central: open_green
article_type_text: Article
verified: verified_batch
elements_source: Web of Science
elements_id: 109530
doi: 10.1063/1.3050324
language_elements: EN
lyricists_name: Kenyon, Anthony
lyricists_id: AJKEN86
full_text_status: public
publication: Journal of Applied Physics
volume: 104
number: 12
article_number: 123108
issn: 0021-8979
citation:        Ahmad, I;    Temple, MP;    Kallis, A;    Wojdak, M;    Oton, CJ;    Barbier, D;    Saleh, H;         ... Loh, WH; + view all <#>        Ahmad, I;  Temple, MP;  Kallis, A;  Wojdak, M;  Oton, CJ;  Barbier, D;  Saleh, H;  Kenyon, AJ;  Loh, WH;   - view fewer <#>    (2008)    Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters.                   Journal of Applied Physics , 104  (12)    , Article 123108.  10.1063/1.3050324 <https://doi.org/10.1063/1.3050324>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/149090/1/149090_JAP%20104-123108%20STRESS%202008.pdf