eprintid: 1487724
rev_number: 35
eprint_status: archive
userid: 608
dir: disk0/01/48/77/24
datestamp: 2016-05-01 20:44:14
lastmod: 2021-11-12 23:54:40
status_changed: 2016-09-14 15:31:36
type: article
metadata_visibility: show
creators_name: Mohandas, RA
creators_name: Freeman, JR
creators_name: Rosamond, MC
creators_name: Hatem, O
creators_name: Chowdhury, S
creators_name: Ponnampalam, L
creators_name: Fice, M
creators_name: Seeds, AJ
creators_name: Cannard, PJ
creators_name: Robertson, MJ
creators_name: Moodie, DG
creators_name: Cunningham, JE
creators_name: Davies, AG
creators_name: Linfield, EH
creators_name: Dean, P
title: Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
note: The following article appeared in the Journal of Applied Physics [Mohandas, RA; Freeman, JR; Rosamond, MC; Hatem, O; Chowdhury, S; Ponnampalam, L; Fice, M; (2016) Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. Journal of Applied Physics , 119 (15), Article 153103. 10.1063/1.4946845] and may be found at http://dx.doi.org/10.1063/1.4946845. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
abstract: We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.
date: 2016-04-21
date_type: published
official_url: http://dx.doi.org/10.1063/1.4946845
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
article_type_text: Journal Article
verified: verified_manual
elements_id: 1126748
doi: 10.1063/1.4946845
lyricists_name: Fice, Martyn
lyricists_name: Ponnampalam, Lalitha
lyricists_name: Seeds, Alwyn
lyricists_id: MFICE70
lyricists_id: LPONN12
lyricists_id: AJSEE43
full_text_status: public
publication: Journal of Applied Physics
volume: 119
number: 15
article_number: 153103
issn: 1089-7550
citation:        Mohandas, RA;    Freeman, JR;    Rosamond, MC;    Hatem, O;    Chowdhury, S;    Ponnampalam, L;    Fice, M;                                 ... Dean, P; + view all <#>        Mohandas, RA;  Freeman, JR;  Rosamond, MC;  Hatem, O;  Chowdhury, S;  Ponnampalam, L;  Fice, M;  Seeds, AJ;  Cannard, PJ;  Robertson, MJ;  Moodie, DG;  Cunningham, JE;  Davies, AG;  Linfield, EH;  Dean, P;   - view fewer <#>    (2016)    Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP.                   Journal of Applied Physics , 119  (15)    , Article 153103.  10.1063/1.4946845 <https://doi.org/10.1063/1.4946845>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1487724/1/Mohandas%20et%20al%20Generation%20of%20continuous%20wave%20terahertz%20frequency%20radiation%20from%20metal-organic%20chemical%20vapour%20deposition%20grown%20Fe-doped%20InGaAs%20and%20InGaAsP.pdf