@article{discovery1487724,
           title = {Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP},
            year = {2016},
         journal = {Journal of Applied Physics},
           month = {April},
          volume = {119},
          number = {15},
            note = {The following article appeared in the Journal of Applied Physics [Mohandas, RA; Freeman, JR; Rosamond, MC; Hatem, O; Chowdhury, S; Ponnampalam, L; Fice, M; (2016) Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. Journal of Applied Physics , 119 (15), Article 153103. 10.1063/1.4946845] and may be found at http://dx.doi.org/10.1063/1.4946845. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.},
             url = {http://dx.doi.org/10.1063/1.4946845},
          author = {Mohandas, RA and Freeman, JR and Rosamond, MC and Hatem, O and Chowdhury, S and Ponnampalam, L and Fice, M and Seeds, AJ and Cannard, PJ and Robertson, MJ and Moodie, DG and Cunningham, JE and Davies, AG and Linfield, EH and Dean, P},
            issn = {1089-7550},
        abstract = {We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.}
}