TY  - JOUR
TI  - Optical signatures of intrinsic electron localization in amorphous SiO2
AV  - public
Y1  - 2015/07/08/
EP  - 6
KW  - Science & Technology
KW  -  Physical Sciences
KW  -  Physics
KW  -  Condensed Matter
KW  -  Physics
KW  -  electron traps
KW  -  optical absorption
KW  -  excited state
KW  -  SELF-TRAPPED HOLES
KW  -  SILICON DIOXIDE
KW  -  GERMANIUM
KW  -  QUARTZ
KW  -  CENTERS
KW  -  DENSITY
KW  -  GLASSES
KW  -  SURFACE
KW  -  ATOMS
N2  - We measure and analyse the optical absorption spectra of three silica glass samples irradiated with 1 MeV electrons at 80 K, where self-trapped holes are stable, and use ab initio calculations to demonstrate that these spectra contain a signature of intrinsic electron traps created as counterparts to the holes. In particular, we argue that optical absorption bands peaking at 3.7, 4.7, and 6.4?eV belong to strongly localised electrons trapped at precursor sites in amorphous structure characterized by strained Si?O bonds and O?Si?O angles greater than 132°. These results are important for our understanding of the properties of silica glass and other silicates as well as the reliability of electronic and optical devices and for luminescence dating.
ID  - discovery1479603
PB  - IOP PUBLISHING LTD
IS  - 26
N1  - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
VL  - 27
JF  - Journal of Physics: Condensed Matter
A1  - El-Sayed, A-M
A1  - Tanimura, K
A1  - Shluger, AL
UR  - http://dx.doi.org/10.1088/0953-8984/27/26/265501
SN  - 0953-8984
ER  -