eprintid: 1475214
rev_number: 26
eprint_status: archive
userid: 608
dir: disk0/01/47/52/14
datestamp: 2016-03-02 14:34:32
lastmod: 2021-09-26 22:46:08
status_changed: 2016-03-02 14:34:32
type: article
metadata_visibility: show
creators_name: Mehonic, A
creators_name: Kenyon, AJ
title: Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
keywords: resistive switching, neuronal dynamics, Hodgkin-Huxley, leaky integrate-and-fire, memristor
note: © 2016 Mehonic and Kenyon. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
abstract: In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM) devices to model key features of biological synapses. This is done to strengthen the link between neuro-computing architectures and neuroscience, bearing in mind the extremely low power consumption and immense parallelism of biological systems. Here we demonstrate the feasibility of using the RRAM cell to go further and to model aspects of the electrical activity of the neuron. We focus on the specific operational procedures required for the generation of controlled voltage transients, which resemble spike-like responses. Further, we demonstrate that RRAM devices are capable of integrating input current pulses over time to produce thresholded voltage transients. We show that the frequency of the output transients can be controlled by the input signal, and we relate recent models of the redox-based nanoionic resistive memory cell to two common neuronal models, the Hodgkin-Huxley (HH) conductance model and the leaky integrate-and-fire model. We employ a simplified circuit model to phenomenologically describe voltage transient generation.
date: 2016-02-23
date_type: published
publisher: Frontiers Research Foundation
official_url: http://dx.doi.org/10.3389/fnins.2016.00057
oa_status: green
full_text_type: pub
language: eng
primo: open
primo_central: open_green
article_type_text: Article
verified: verified_manual
elements_id: 1113336
doi: 10.3389/fnins.2016.00057
lyricists_name: Kenyon, Anthony
lyricists_name: Mehonic, Adnan
lyricists_id: AJKEN86
lyricists_id: AMEHO63
actors_name: Kenyon, Anthony
actors_id: AJKEN86
actors_role: owner
full_text_status: public
publication: Frontiers in Neuroscience
volume: 10
article_number: 57
issn: 1662-453X
citation:        Mehonic, A;    Kenyon, AJ;      (2016)    Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.                   Frontiers in Neuroscience , 10     , Article 57.  10.3389/fnins.2016.00057 <https://doi.org/10.3389/fnins.2016.00057>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1475214/1/Frontiers%20Neuroscience%202016.pdf