eprintid: 1465913
rev_number: 37
eprint_status: archive
userid: 608
dir: disk0/01/46/59/13
datestamp: 2015-04-13 20:01:33
lastmod: 2021-10-15 23:11:08
status_changed: 2016-02-22 11:46:01
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Sathasivam, S
creators_name: Arnepalli, RR
creators_name: Singh, KK
creators_name: Visser, RJ
creators_name: Blackman, CS
creators_name: Carmalt, CJ
title: A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells
ispublished: pub
divisions: UCL
divisions: B04
divisions: C06
divisions: F56
keywords: Gallium arsenide, AACVD, solution processing, photovoltaics
abstract: The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported. The gallium arsenide films were analysed by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Powder XRD showed that cubic polycrystalline GaAs had been deposited with films grown at the higher temperatures having a Ga to As ratio of 1 : 1. EDX mapping, XPS depth profiling and SIMS showed that the films contained low levels of contaminants. The method described shows the formation of GaAs films with increasing crystallinity and stoichiometry reaching unity with increasing deposition temperature.
date: 2015-01-21
official_url: http://dx.doi.org/10.1039/c4ra13902j
vfaculties: VMPS
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_source: WoS-Lite
elements_id: 1019362
doi: 10.1039/c4ra13902j
lyricists_name: Blackman, Christopher
lyricists_name: Carmalt, Claire
lyricists_name: Sathasivam, Sanjayan
lyricists_id: CBLAC43
lyricists_id: CJCAR00
lyricists_id: SSATH67
full_text_status: public
publication: RSC Advances
volume: 5
number: 16
pagerange: 11812-11817
issn: 2046-2069
citation:        Sathasivam, S;    Arnepalli, RR;    Singh, KK;    Visser, RJ;    Blackman, CS;    Carmalt, CJ;      (2015)    A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells.                   RSC Advances , 5  (16)   pp. 11812-11817.    10.1039/c4ra13902j <https://doi.org/10.1039/c4ra13902j>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1465913/2/Carmalt_A%20Solution%20Based%20Route%20to%20GaAs%20Thin%20Films%20from%20As%28NMe2%293%20and%20GaMe3%20for%20Solar%20Cells.pdf
document_url: https://discovery.ucl.ac.uk/id/eprint/1465913/1/Carmalt_1474068_Supporting%20Information.pdf