eprintid: 1465913 rev_number: 37 eprint_status: archive userid: 608 dir: disk0/01/46/59/13 datestamp: 2015-04-13 20:01:33 lastmod: 2021-10-15 23:11:08 status_changed: 2016-02-22 11:46:01 type: article metadata_visibility: show item_issues_count: 0 creators_name: Sathasivam, S creators_name: Arnepalli, RR creators_name: Singh, KK creators_name: Visser, RJ creators_name: Blackman, CS creators_name: Carmalt, CJ title: A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells ispublished: pub divisions: UCL divisions: B04 divisions: C06 divisions: F56 keywords: Gallium arsenide, AACVD, solution processing, photovoltaics abstract: The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported. The gallium arsenide films were analysed by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Powder XRD showed that cubic polycrystalline GaAs had been deposited with films grown at the higher temperatures having a Ga to As ratio of 1 : 1. EDX mapping, XPS depth profiling and SIMS showed that the films contained low levels of contaminants. The method described shows the formation of GaAs films with increasing crystallinity and stoichiometry reaching unity with increasing deposition temperature. date: 2015-01-21 official_url: http://dx.doi.org/10.1039/c4ra13902j vfaculties: VMPS oa_status: green full_text_type: other language: eng primo: open primo_central: open_green verified: verified_manual elements_source: WoS-Lite elements_id: 1019362 doi: 10.1039/c4ra13902j lyricists_name: Blackman, Christopher lyricists_name: Carmalt, Claire lyricists_name: Sathasivam, Sanjayan lyricists_id: CBLAC43 lyricists_id: CJCAR00 lyricists_id: SSATH67 full_text_status: public publication: RSC Advances volume: 5 number: 16 pagerange: 11812-11817 issn: 2046-2069 citation: Sathasivam, S; Arnepalli, RR; Singh, KK; Visser, RJ; Blackman, CS; Carmalt, CJ; (2015) A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells. RSC Advances , 5 (16) pp. 11812-11817. 10.1039/c4ra13902j <https://doi.org/10.1039/c4ra13902j>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/1465913/2/Carmalt_A%20Solution%20Based%20Route%20to%20GaAs%20Thin%20Films%20from%20As%28NMe2%293%20and%20GaMe3%20for%20Solar%20Cells.pdf document_url: https://discovery.ucl.ac.uk/id/eprint/1465913/1/Carmalt_1474068_Supporting%20Information.pdf