TY  - JOUR
ID  - discovery1465913
N2  - The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported. The gallium arsenide films were analysed by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Powder XRD showed that cubic polycrystalline GaAs had been deposited with films grown at the higher temperatures having a Ga to As ratio of 1 : 1. EDX mapping, XPS depth profiling and SIMS showed that the films contained low levels of contaminants. The method described shows the formation of GaAs films with increasing crystallinity and stoichiometry reaching unity with increasing deposition temperature.
SN  - 2046-2069
UR  - http://dx.doi.org/10.1039/c4ra13902j
JF  - RSC Advances
KW  - Gallium arsenide
KW  -  AACVD
KW  -  solution processing
KW  -  photovoltaics
A1  - Sathasivam, S
A1  - Arnepalli, RR
A1  - Singh, KK
A1  - Visser, RJ
A1  - Blackman, CS
A1  - Carmalt, CJ
TI  - A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells
EP  - 11817
AV  - public
VL  - 5
Y1  - 2015/01/21/
SP  - 11812
IS  - 16
ER  -