eprintid: 1465677
rev_number: 25
eprint_status: archive
userid: 608
dir: disk0/01/46/56/77
datestamp: 2015-04-10 21:14:03
lastmod: 2021-09-26 22:35:58
status_changed: 2015-04-10 21:14:03
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Xiong, G
creators_name: Moutanabbir, O
creators_name: Reiche, M
creators_name: Harder, R
creators_name: Robinson, I
title: Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures.
ispublished: pub
divisions: UCL
divisions: B04
divisions: C06
divisions: F64
keywords: coherent X-ray diffraction Imaging, nanowire, silicon-on-Insulator, strain, ultrathin layer
note: © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
abstract: Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.
date: 2014-12-10
official_url: http://dx.doi.org/10.1002/adma.201304511
vfaculties: VMPS
oa_status: green
full_text_type: pub
language: eng
primo: open
primo_central: open_green
article_type_text: Journal Article
verified: verified_manual
elements_source: PubMed
elements_id: 1007518
doi: 10.1002/adma.201304511
lyricists_name: Robinson, Ian
lyricists_id: IKROB22
full_text_status: public
publication: Adv Mater
volume: 26
number: 46
pagerange: 7747 - 7763
event_location: Germany
citation:        Xiong, G;    Moutanabbir, O;    Reiche, M;    Harder, R;    Robinson, I;      (2014)    Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures.                   Adv Mater , 26  (46)   7747 - 7763.    10.1002/adma.201304511 <https://doi.org/10.1002/adma.201304511>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1465677/1/adma201304511.pdf