TY  - JOUR
JF  - Adv Mater
VL  - 26
ID  - discovery1465677
Y1  - 2014/12/10/
UR  - http://dx.doi.org/10.1002/adma.201304511
TI  - Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures.
N1  - © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
IS  - 46
AV  - public
A1  - Xiong, G
A1  - Moutanabbir, O
A1  - Reiche, M
A1  - Harder, R
A1  - Robinson, I
KW  - coherent X-ray diffraction Imaging
KW  -  nanowire
KW  -  silicon-on-Insulator
KW  -  strain
KW  -  ultrathin layer
N2  - Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.
SP  - 7747 
EP  -  7763
ER  -