TY  - JOUR
UR  - http://dx.doi.org/10.1088/0953-8984/26/29/295301
TI  - Hydrogen adsorption and diffusion around Si(0 0 1)/Si(1 1 0) corners in nanostructures
N2  - While the diffusion of hydrogen on silicon surfaces has been relatively well characterized, both experimentally and theoretically, diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been studied. Motivated by nanostructure fabrication by Patterned Atomic Layer Epitaxy, we present a density functional theory study of the diffusion of hydrogen around the edge formed by the orthogonal (0 0 1) and (1 1 0) surfaces in silicon. We find that the barrier from (0 0 1) to (1 1 0) is approximately 0.3 eV lower than from (1 1 0) to (0 0 1), and that it is comparable to diffusion between rows on a clean surface, with no significant effect on the hydrogen patterns at the growth temperatures used.
IS  - 29
VL  - 26
Y1  - 2014/07/23/
A1  - Smith, R
A1  - Brázdová, V
A1  - Bowler, DR
ID  - discovery1443432
SN  - 1361-648X
N1  - Copyright © 2014 IOP Publishing Ltd.
JF  - Journal of Physics: Condensed Matter
AV  - public
ER  -