TY  - JOUR
ID  - discovery1428980
SN  - 1530-6984
N1  - This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
JF  - Nano Letters
EP  - 2018
AV  - public
IS  - 4
N2  - We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm(2) at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.
VL  - 14
Y1  - 2014/04/09/
A1  - Wu, J
A1  - Li, Y
A1  - Kubota, J
A1  - Domen, K
A1  - Aagesen, M
A1  - Ward, T
A1  - Sanchez, A
A1  - Beanland, R
A1  - Zhang, Y
A1  - Tang, M
A1  - Hatch, S
A1  - Seeds, A
A1  - Liu, H
SP  - 2013
UR  - http://dx.doi.org/10.1021/nl500170m
TI  - Wafer-Scale Fabrication of Self-Catalyzed 1.7 eV GaAsP Core-Shell Nanowire Photocathode on Silicon Substrates
ER  -