eprintid: 1406363
rev_number: 42
eprint_status: archive
userid: 608
dir: disk0/01/40/63/63
datestamp: 2013-09-19 18:55:17
lastmod: 2021-09-26 22:21:08
status_changed: 2013-09-19 18:55:17
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Mehonic, A
creators_name: Vrajitoarea, A
creators_name: Cueff, S
creators_name: Hudziak, S
creators_name: Howe, H
creators_name: Labbé, C
creators_name: Rizk, R
creators_name: Pepper, M
creators_name: Kenyon, AJ
title: Quantum conductance in silicon oxide resistive memory devices.
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
note: This work is licensed under a Creative Commons Attribution 3.0 Unported license.
To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0

PMCID: PMC3776960
abstract: Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G0. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium - typically several nanometres. Here we find that the conductance of silicon-rich silica (SiOx) resistive switches is quantised in half-integer multiples of G0. In contrast to other resistive switching systems this quantisation is intrinsic to SiOx, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation.
date: 2013-09-19
official_url: http://dx.doi.org/10.1038/srep02708
vfaculties: VENG
oa_status: green
full_text_type: pub
language: eng
primo: open
primo_central: open_green
article_type_text: Journal Article, Research Support, Non-U.S. Gov't
verified: verified_manual
elements_source: PubMed
elements_id: 902752
doi: 10.1038/srep02708
pii: srep02708
lyricists_name: Hudziak, Steve
lyricists_name: Kenyon, Anthony
lyricists_name: Mehonic, Adnan
lyricists_name: Pepper, Michael
lyricists_id: SHUDZ49
lyricists_id: AJKEN86
lyricists_id: AMEHO63
lyricists_id: MPEPP38
full_text_status: public
publication: Sci Rep
volume: 3
article_number: 2708
event_location: England
issn: 2045-2322
citation:        Mehonic, A;    Vrajitoarea, A;    Cueff, S;    Hudziak, S;    Howe, H;    Labbé, C;    Rizk, R;         ... Kenyon, AJ; + view all <#>        Mehonic, A;  Vrajitoarea, A;  Cueff, S;  Hudziak, S;  Howe, H;  Labbé, C;  Rizk, R;  Pepper, M;  Kenyon, AJ;   - view fewer <#>    (2013)    Quantum conductance in silicon oxide resistive memory devices.                   Sci Rep , 3     , Article 2708.  10.1038/srep02708 <https://doi.org/10.1038/srep02708>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/1406363/1/srep02708.pdf