TY  - JOUR
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TI  - Crystalline, Magnetic and Optical Properties of the CaLaSnFeO6 Perovskite
Y1  - 2025/03/01/
AV  - public
VL  - 38
JF  - Journal of Superconductivity and Novel Magnetism
KW  - Complex ordered perovskites
KW  -  Crystal structure
KW  -  Ferromagnetic semiconductor
A1  - Moya, XA Velásquez
A1  - Fajardo, JC Rincón
A1  - Barragán, SG Posada
A1  - Peña, SJ Niño
A1  - Crisolo, TN Quispe
A1  - Sánchez, A Moreno
A1  - Carreño, AN Morales
A1  - Toro, CE Deluque
A1  - Téllez, DA Landínez
A1  - de Los Santos Valladares, L
A1  - Barnes, CHW
A1  - Holmes, S
A1  - Roa-Rojas, J
ID  - discovery10205549
N2  - In order to obtain new materials with multifunctional properties, CaLaSnFeO6 samples were synthesized by the solid reaction technique. Structural analysis was performed by X-ray diffraction technique. Rietveld refinement of the experimental data revealed that these materials crystallize in a perovskite-type monoclinic structure (P21/n, space group #14) with alternating arrangement of Fe-Sn cations along the three crystallographic axes. The strongly granular character of the surface of the material was observed by scanning electron microscopy micrographs. X-ray energy dispersive spectra exhibited a close correspondence of the composition of the samples with that expected from their stoichiometric formula. Magnetic characterization in the temperature regime 50 K?<?T?<?325 K and applied fields up to 30 kOe suggests the occurrence of a ferromagnetic ordering with Curie temperature TC?=?204 K. Diffuse reflectance spectra revealed the semiconducting characteristic of the CaLaSnFeO6 double perovskite with a bandgap of Eg?=?2.33 eV. To establish the origin of the magnetic interactions, electronic structure calculations were performed in the vicinity of the Fermi level by means of the Density Functional Theory. These properties generate technological expectations in the spintronics industry for the production of information storage devices on magnetic media based on polarized spin currents such as spin valves and magnetic transistors.
SN  - 1557-1939
PB  - Springer Science and Business Media LLC
UR  - https://doi.org/10.1007/s10948-025-06902-1
ER  -