%0 Journal Article
%@ 0022-3727
%A Xiong, Jianming
%A Chen, Zheng
%A Gong, Tao
%A Dong, Jiawei
%A Hu, Wenyu
%A Ma, Zhenyu
%A Deng, Yong
%A Zheng, Jiawei
%A Zhang, Xin
%A Ma, Jian
%A Chen, Longqing
%A Li, Jinfeng
%A Wang, Xiaoyi
%A Qiu, Yang
%A Dang, Manyu
%A Deng, Huiwen
%A Tang, Mingchu
%A Liu, Huiyun
%A Zhu, Jun
%A Ruterana, Pierre
%D 2025
%F discovery:10204851
%I Institute of Physics
%J Journal of Physics D: Applied Physics
%K Schottky barrier; Transmission electron microscopy; Geometrical phase analysis;  electron localization function
%N 11
%T Inhibition of Pt-InGaAs chemical reaction by Al incorporation: towards stable Pt Schottky barriers on GaAs-based alloys and compounds
%U https://discovery.ucl.ac.uk/id/eprint/10204851/
%V 58
%X Platinum and Gallium Arsenide reaction is a common issue for the stability of Pt-GaAs contacts, where the formation of different alloys during the fabrication and operation degrades the performance of the devices. In this work, we have carried out in situ deposition of Pt on GaAs and InAlGaAs in the focused ion beam machine and carried out annealing in the high-resolution transmission electron microscope. The local strains were then determined using the geometrical phase analysis technique and the various phases were obtained by digital extraction of lattice fringes. They are mainly Pt3InGa and Pt3InGaAl metallic nanoparticles and it is shown that the occupancy of In/Ga sites by Al atoms shrinks the Pt3InGa local lattice. This strong compression of the (001) and (110) atomic plane narrows the dimer row and thus hinders the diffusion of large atoms such as In/Ga. Therefore, the Schottky barrier is stabilized as further chemical reaction of Pt-InGaAs is blocked. The highest degree of electron localization between Pt and Al atoms is further confirmed by electron localization function calculations.
%Z This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.