eprintid: 10199331
rev_number: 7
eprint_status: archive
userid: 699
dir: disk0/10/19/93/31
datestamp: 2024-11-01 12:50:19
lastmod: 2024-11-01 12:50:19
status_changed: 2024-11-01 12:50:19
type: article
metadata_visibility: show
sword_depositor: 699
creators_name: Chen, Yue
creators_name: Zhang, Weijian
creators_name: Lu, Yuezhen
creators_name: Chen, Minzhen
creators_name: Chen, Jing
creators_name: Lu, Hongyi
creators_name: Niu, Yubiao
creators_name: Zhao, Guiying
creators_name: Tao, Jianming
creators_name: Li, Jiaxin
creators_name: Lin, Yingbin
creators_name: Kolosov, Oleg
creators_name: Huang, Zhigao
title: Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors
ispublished: pub
divisions: UCL
divisions: B04
divisions: F46
keywords: FILMS, Physical Sciences, Physics, Physics, Applied, Science & Technology
note: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain-source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices.
date: 2024-12
date_type: published
publisher: American Institute of Physics
official_url: https://doi.org/10.1063/5.0200811
full_text_type: pub
language: eng
verified: verified_manual
elements_id: 2330978
doi: 10.1063/5.0200811
lyricists_name: Lu, Yuezhen
lyricists_id: YLULX17
actors_name: Flynn, Bernadette
actors_id: BFFLY94
actors_role: owner
funding_acknowledgements: 62474041 [Natural Science Foundation of Fujian Province10.13039/501100003392]; 52403294 [Natural Science Foundation of Fujian Province10.13039/501100003392]; 22179020 [Natural Science Foundation of Fujian Province10.13039/501100003392]; 2023J01521 [National Natural Science Foundation of China]; 2023XQ010 [Science Foundation of the Fujian Province]; EP/V00767X/1 [Key research and industrialization projects of technological innovation in Fujian Province]; CSC-202108890030 [EPSRC]; [Chinese Scholarship Commission]
full_text_status: restricted
publication: Applied Physics Reviews
volume: 11
number: 4
article_number: 041407
pages: 9
issn: 1931-9401
citation:        Chen, Yue;    Zhang, Weijian;    Lu, Yuezhen;    Chen, Minzhen;    Chen, Jing;    Lu, Hongyi;    Niu, Yubiao;                         ... Huang, Zhigao; + view all <#>        Chen, Yue;  Zhang, Weijian;  Lu, Yuezhen;  Chen, Minzhen;  Chen, Jing;  Lu, Hongyi;  Niu, Yubiao;  Zhao, Guiying;  Tao, Jianming;  Li, Jiaxin;  Lin, Yingbin;  Kolosov, Oleg;  Huang, Zhigao;   - view fewer <#>    (2024)    Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors.                   Applied Physics Reviews , 11  (4)    , Article 041407.  10.1063/5.0200811 <https://doi.org/10.1063/5.0200811>.      
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10199331/1/041407_1_5.0200811.pdf